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| D2009UK document number 5535 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk p d power dissipation bv dss drain ? source breakdown voltage * bv gss gate ? source breakdown voltage * i d(sat) drain current * t stg storage temperature t j maximum operating junction temperature 58w 65v 20v 2a ?65 to 150c 200c mechanical data c a o n mk j i h g f e d b 1 54 3 2 gold metallised multi-purpose silicon dmos rf fet 10w ? 28v ? 1ghz push?pull features ? simplified amplifier design ? suitable for broad band applications ? very low c rss ? simple bias circuits ? low noise ? high gain ? 10 db minimum absolute maximum ratings (t case = 25c unless otherwise stated) applications ? vhf/uhf communications from 50 mhz to 1 ghz metal gate rf silicon fet tetrafet dim mm tol. inches tol. a 16.38 0.26 0.645 0.010 b 1.52 0.13 0.060 0.005 c 45 5 45 5 d 6.35 0.13 0.250 0.005 e 3.30 0.13 0.130 0.005 f 14.22 0.13 0.560 0.005 g 1.27 x 45 0.13 0.05 x 45 0.005 h 1.52 0.13 0.060 0.005 i 6.35 0.13 0.250 0.005 j 0.13 0.02 0.005 0.001 k 2.16 0.13 0.085 0.005 m 1.52 0.13 0.060 0.005 n 5.08 max 0.200 max o 18.90 0.13 0.744 0.005 dq pin 1 source (common) pin 3 drain 2 pin 5 gate 1 pin 2 drain 1 pin 4 gate 2 * per side rohs compliant
D2009UK document number 5535 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk parameter test conditions min. typ. max. unit 65 2 1 17 0.36 10 40 20:1 24 12 1 v gs = 0 i d = 10ma v ds = 28v v gs = 0 v gs = 20v v ds = 0 i d = 10ma v ds = v gs v ds = 10v i d = 2a p o = 10w v ds = 28v i dq = 0.4a f = 1ghz v ds = 28v v gs = ?5v f = 1mhz v ds = 28v v gs = 0 f = 1mhz v ds = 28v v gs = 0 f = 1mhz v ma a v s db % ? pf pf pf electrical characteristics (t case = 25c unless otherwise stated) drain?source breakdown voltage zero gate voltage drain current gate leakage current gate threshold voltage* forward transconductance* common source power gain drain efficiency load mismatch tolerance input capacitance output capacitance reverse transfer capacitance hazardous material warning the ceramic portion of the device between leads and metal flange is beryllium oxide. beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. r thj?case thermal resistance junction ? case max. 3.0c / w thermal data * pulse test: pulse duration = 300 s , duty cycle 2% total device per side per side bv dss i dss i gss v gs(th) g fs g ps vswr c iss c oss c rss |
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